Semiconductor device

ABSTRACT

A semiconductor device includes a vertical Hall element provided in a first region of a semiconductor substrate, and having the first to the third electrodes arranged side by side in order along a first straight line; a circuit provided in a second region of the semiconductor substrate different from the first region, and having a heat source; and a second straight line intersecting orthogonally a current path for a Hall element drive current which flows between the first electrode and the third electrode. The second line passes a center of the vertical Hall element, and a center point of a region which reaches the highest temperature in the circuit during an operation of the vertical Hall element lies on the second straight line.

RELATED APPLICATIONS

This application claims priority to Japanese Patent Application No.2019-015419 filed on Jan. 31, 2019, the entire content of which isincorporated herein by reference.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to a semiconductor device, and moreparticularly, to a semiconductor device including a vertical Hallelement and a heat source.

2. Description of the Related Art

A Hall element is capable of detecting position or angle without contactas a magnetic sensor, and accordingly has various uses. While magneticsensors that use a horizontal Hall element configured to detect magneticfield component perpendicular to a semiconductor substrate surface areparticularly well known, there have been proposed various magneticsensors that use a vertical Hall element configured to detect magneticfield component parallel to the substrate surface. Further, there hasbeen proposed a magnetic sensor configured to detect a magnetic fieldtwo-dimensionally or three-dimensionally with use of a combination of ahorizontal Hall element and a vertical Hall element.

Since it is difficult for a vertical Hall element to have a structurewith high geometrical-symmetry, the vertical Hall element is more likelyto generate a so-called offset voltage than the horizontal Hall elementeven though no magnetic field is applied. In a vertical Hall elementwhich is used as a magnetic sensor, removal of the offset voltage isnecessary. The spinning current method has been known as one of themethods.

For removal of the offset voltage through use of the spinning currentmethod in a vertical Hall element which has five electrodes linearlyarranged at some intervals on a surface of a semiconductor substrate, amethod is known in which direction of the flow of the drive current isswitched among four directions while the magnetic field is applied in adirection parallel to the semiconductor substrate (see, for example,FIG. 1 of WO 03/036733).

With this method, the offset voltage is removed by adding or subtractingthe following first to fourth output signals. The first output signalcorresponds to a potential difference caused between a center electrodeand each of two electrodes on opposite ends by a drive current flowingin a direction (referred to as “first direction”) from one of twoelectrodes on both sides of the center electrode to the other, thesecond output signal corresponds to a potential difference causedbetween the center electrode and each of the two electrodes on oppositeends by the drive current flowing in a direction (referred to as “seconddirection”) opposite to the first direction, the third output signalcorresponds to a potential difference caused between the two electrodeson both sides of the center electrode by the drive current flowing in adirection (referred to as “third direction”) from the center electrodeto each of the two electrodes on opposite ends, and the fourth outputsignal corresponds to a potential difference caused between the twoelectrodes on both sides of the center electrode by the drive currentflowing in a direction (referred to as “fourth direction”) opposite tothe third direction.

In the conventional vertical Hall element as described in WO 03/036733,the temperature inside the vertical Hall element is not uniform and atemperature distribution occurs in the vertical Hall element, then athermoelectric current constantly flows from a high-temperature portionto a low-temperature portion in the vertical Hall element. Such a stateis made, for example, by a circuit for driving the vertical Hall elementwhich includes an element acting as a heat source is provided around thevertical Hall element.

In the removal of the offset voltage through use of the spinning currentmethod in the above-mentioned state, the current flows differently inthe first to fourth directions due to the influence of thethermoelectric current, with the result that the offset voltage cannotbe removed with sufficiently high accuracy.

SUMMARY OF THE INVENTION

In view of the above, it is an object of the present invention toprovide a semiconductor device including a circuit having a heat source,and including a vertical Hall element in which an offset voltage can beremoved with high accuracy through use of a spinning current method.

According to at least one embodiment of the present invention, asemiconductor device includes a first vertical Hall element provided ina first region of a semiconductor substrate, and having a firstelectrode, a second electrode, and a third electrode that are arrangedside by side in order along a first straight line; a first circuitprovided in a second region of the semiconductor substrate differentfrom the first region, and having a heat source; and a second straightline intersecting orthogonally a first current path for a Hall elementdrive current which flows between the first electrode and the thirdelectrode, the second straight line passing a center of the firstvertical Hall element, wherein a center point of a region that reachesthe highest temperature in the first circuit during an operation of thefirst vertical Hall element lies on the second straight line.

According to at least one embodiment of the present invention, heatgenerated from the heat source is transferred symmetrically in plan viewwith respect to the second straight line passing the center of thevertical Hall element, into the vertical Hall element from a portion atwhich the second straight line crosses an end portion of the verticalHall element on the heat source side. Even though the vertical Hallelement has a temperature distribution due to the influence of the heatgenerated from the heat source, upon switching the direction of thecurrent flowing through the current path in accordance with the spinningcurrent method, manner of flowing of the currents becomes substantiallythe same in every direction, and thus the offset voltage can be removedwith high accuracy.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view of a semiconductor device according to a firstembodiment of the present invention.

FIG. 2 is a sectional view taken along the line A1-A1 of FIG. 1.

FIG. 3 is a plan view of a semiconductor device according to a secondembodiment of the present invention.

FIG. 4 is a plan view of a semiconductor device according to a thirdembodiment of the present invention.

FIG. 5 is a plan view of a semiconductor device according to a fourthembodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

In the following, embodiments of the present invention are described indetail with reference to the drawings.

First Embodiment

FIG. 1 is a plan view of a semiconductor device 10 including a verticalHall element and a heat source according to the first embodiment of thepresent invention. FIG. 2 is a sectional view taken along the line A1-A1of FIG. 1. The line A1-A1 is supposed to equally divide the verticalHall element 110 along the longitudinal direction.

As illustrated in FIG. 1, the semiconductor device 10 of the firstembodiment includes a vertical Hall element 110 provided in a region R1of a semiconductor substrate 101 (see FIG. 2), and a circuit 210 havinga heat source which is provided in a region R2 different from the regionR1.

As illustrated in FIG. 2, the vertical Hall element 110 includes anN-type (second conductivity type) semiconductor layer 102 formed as amagnetic sensing portion on the P-type (first conductivity type)semiconductor substrate 101, and electrodes 111 to 115 formed fromN-type impurity regions and arranged in the surface of the semiconductorlayer 102 as electrodes for supplying a drive current and for producinga Hall voltage. As illustrated in FIG. 1, the electrodes 111 to 115 arearranged side by side in order along the straight line A1-A1.

As illustrated in FIG. 2, a P-type element isolation diffusion layer 103is formed around the vertical Hall element 110 so as to surround thevertical Hall element 110. The vertical Hall element 110 and the circuit210 having the heat source are electrically isolated from each other bythe element isolation diffusion layer 103.

The circuit 210 having the heat source is, for example, a circuit fordriving the vertical Hall element 110 or a circuit for processing anoutput signal from the vertical Hall element 110. Such circuit has atransistor or the like acting as a heat source in many cases. Examplesof the heat source include a resistive element through which largecurrent flows and an output transistor of a voltage regulator which isused for obtaining an internal power supply voltage as a power supplyvoltage for driving the vertical Hall element 110, generated by steppingdown an external power supply voltage through the voltage regulator,instead of using the external power supply voltage.

Next, a positional relationship between the vertical Hall element 110and the circuit 210 having the heat source is described.

In the vertical Hall element 110 of FIG. 1, removal of an offset voltagethrough use of the spinning current method requires flow of the drivecurrent in four directions, that is, a direction (first direction) fromthe electrode 112 to the electrode 114, a direction (second direction)from the electrode 114 to the electrode 112, a direction (thirddirection) from the electrode 113 to each of the electrode 111 and theelectrode 115, and a direction (fourth direction) from each of theelectrode 111 and the electrode 115 to the electrode 113, In FIG. 1, acurrent path CP1 for a Hall element drive current flowing between theelectrode 112 and the electrode 114, a current path CP2 for a Hallelement drive current flowing between the electrode 113 and theelectrode 111, and a current path CP3 for a Hall element drive currentflowing between the electrode 113 and the electrode 115 are illustrated.Specifically, the current path CP1 corresponds to a path for the drivecurrent in the first direction and the second direction, and the currentpaths CP2 and CP3 correspond to paths for the drive current in the thirddirection and the fourth direction.

In the first embodiment, the vertical Hall element 110 and the circuit210 having the heat source are arranged so that a center point 210 h ofa region 210 hr that reaches the highest temperature in the circuit 210during the operation of the vertical Hall element 110 (during executionof the spinning current method), lies on the straight line A2-A2intersecting orthogonally the current path CP1 and passing the center ofthe vertical Hall element 110.

With this arrangement, heat generated from the heat source in thecircuit 210 is transferred symmetrically in plan view with respect tothe straight line A2-A2, into the vertical Hall element 110 from aportion IS1 at which the straight line A2-A2 crosses an end portion ofthe vertical Hall element 110 on the circuit 210 side. Even though thevertical Hall element 110 has a temperature distribution due to theinfluence of the heat generated from the heat source in the circuit 210,upon switching a direction in which a current flows through the currentpath CP1 between the first direction and the second directions inaccordance with the spinning current method, manner of flowing of thetwo currents hence becomes substantially the same in those twodirections.

Upon switching the direction of the current supplied to flow througheach of the current paths CP2 and CP3 between the third direction andthe fourth direction as well, the current path CP2 and the current pathCP3 are arranged symmetrically in plan view with respect to the straightline A2-A2, and hence the vertical Hall element 110 has a temperaturedistribution symmetric in plan view with respect to the straight lineA2-A2, with the result that the current path CP2 and the current pathCP3 exhibit substantially the same and symmetric temperaturedistribution. Manner of flowing of the two current hence becomessubstantially the same in the third direction and the fourth direction.

Consequently, according to the first embodiment, even though the heatgenerated from the heat source in the circuit 210 reaches the verticalHall element 110 and the vertical Hall element 110 has a temperaturedistribution, the offset voltage can be removed with high accuracythrough use of the spinning current method.

Here, the electrodes 111 to 115 of the vertical Hall element 110preferably have substantially the same size and shape and are arrangedat substantially equal intervals. With this configuration, the verticalHall element 110 becomes line-symmetric with respect to its center line,that is, the straight line A2-A2, and manner of flowing of the currentsbecomes substantially the same in every direction in any of the currentpaths CP1, CP2, and CP3. This configuration allows highly accurateremoval of the offset voltage through use of the spinning currentmethod.

Second Embodiment

In the first embodiment described above, the number of circuits having aheat source is one, but the number of circuits having a heat source inthe circuits provided around the vertical Hall element is not limited toone. In the second embodiment of the present invention, description isgiven of a case in which a plurality of circuits having a heat sourceare provided around a vertical Hall element. FIG. 3 is a plan view of asemiconductor device 20 including a vertical Hall element and circuitshaving a heat source according to the second embodiment of the presentinvention.

As illustrated in FIG. 3, the semiconductor device 20 of the secondembodiment further includes a circuit 220 having a heat source which isprovided in a region R3 different from the regions R1 and R2 in additionto the components of the semiconductor device 10 of the firstembodiment. The same components as those of the semiconductor device 10of the first embodiment as illustrated in FIG. 1 are denoted by the samereference symbols, and redundant description thereof is omitted asappropriate.

In the semiconductor device 20 of the second embodiment, the circuit 220having the heat source is provided so that a center point 220 h of aregion 220 hr that reaches the highest temperature in the circuit 220during the operation of the vertical Hall element 110 (during executionof the spinning current method), lies on the straight line A2-A2.

With this arrangement, heat generated from the heat source in thecircuit 220 is transferred symmetrically in plan view with respect tothe straight line A2-A2, into the vertical Hall element 110 from aportion IS2 at which the straight line A2-A2 crosses an end portion ofthe vertical Hall element 110 on the circuit 220 side. Accordingly, eventhough the vertical Hall element 110 has a temperature distribution dueto an influence of the heat generated from the heat source in thecircuit 220 similarly to the heat generated from the heat source in thecircuit 210, upon switching the direction in which the current flowsthrough the current path CP1 between the first direction and the seconddirection in accordance with the spinning current method, manner offlowing of the currents becomes substantially the same in those twodirections. Further, the temperature distributions along the currentpath CP2 and the current path CP3 are also symmetric and substantiallythe same. Manner of flowing of the currents thus becomes substantiallythe same in the third direction and the fourth direction.

Consequently, according to the second embodiment, even though the heatgenerated from the heat source in the circuit 210 and the heat generatedfrom the heat source in the circuit 220 reach the vertical Hall element110, and generate a temperature distribution in the vertical Hallelement 110, the offset voltage can be removed with high accuracythrough use of the spinning current method.

As described above, even though a plurality of circuits having a heatsource are provided, the offset voltage can be removed with highaccuracy through use of the spinning current method.

In the first and second embodiments description was made for the onevertical Hall element. In the following, as third and fourth embodimentsof the present invention, description is given of a plurality ofvertical Hall elements provided on the same semiconductor substrate.

Third Embodiment

In the third embodiment, description is given of two vertical Hallelements provided in parallel to each other on the same semiconductorsubstrate. FIG. 4 is a plan view of a semiconductor device 30 includingvertical Hall elements and a heat source according to the thirdembodiment of the present invention.

As illustrated in FIG. 4, the semiconductor device 30 of the thirdembodiment further includes a vertical Hall element 120 provided inparallel to the vertical Hall element 110, in the region R3 differentfrom the regions R1 and R2, in addition to the components of thesemiconductor device 10 of the first embodiment. The same components asthose of the semiconductor device 10 of the first embodiment asillustrated in FIG. 1 are denoted by the same reference symbols, andredundant description thereof is omitted as appropriate.

The vertical Hall element 120 includes the N-type semiconductor layer102 (see FIG. 2) formed as the magnetic sensing portion on the P-typesemiconductor substrate 101, and electrodes 121 to 125 formed fromN-type impurity regions in the surface of the semiconductor layer 102 aselectrodes for supplying a drive current and for outputting a Hallvoltage. As illustrated in FIG. 4, the electrodes 121 to 125 arearranged side by side in order along the straight line A3-A3. The lineA3-A3 is supposed to equally divide the vertical Hall element 120 alongthe longitudinal direction.

The P-type element isolation diffusion layer 103 (see FIG. 2) is formedto surround the vertical Hall element 120, and the circuit 210 havingthe heat source, the vertical Hall element 110, and the vertical Hallelement 120 are electrically and mutually isolated by the elementisolation diffusion layer 103.

Next, a positional relationship among the circuit 210 having the heatsource, the vertical Hall element 110, and the vertical Hall element 120is described.

In the vertical Hall element 120 of FIG. 4, removal of the offsetvoltage through use of the spinning current method requires flow of thedrive current in four directions, that is, a direction (first direction)from the electrode 122 to the electrode 124, a direction (seconddirection) from the electrode 124 to the electrode 122, a direction(third direction) from the electrode 123 to each of the electrode 121and the electrode 125, and a direction (fourth direction) from each ofthe electrode 121 and the electrode 125 to the electrode 123. In FIG. 4,a current path CP4 for a Hall element drive current flowing between theelectrode 122 and the electrode 124, a current path CP5 for a Hallelement drive current flowing between the electrode 123 and theelectrode 121, and a current path CP6 for a Hall element drive currentflowing between the electrode 123 and the electrode 125 are illustrated.Specifically, the current path CP4 corresponds to a path for a drivecurrent in the first direction and the second direction in the verticalHall element 120, and the current paths CP5 and CPC correspond to pathsfor a drive current in the third direction and the fourth direction inthe vertical Hall element 120.

In the third embodiment, the vertical Hall element 120 is provided, inaddition to the semiconductor device 10 of the first embodiment asillustrated in FIG. 1 in which the vertical Hall element 110 and thecircuit 210, having the heat source are arranged so that the straightline intersecting orthogonally the current path CP4 in the vertical Hallelement 120 and passing the center of the vertical Hall element 120coincides with the straight line A2-A2. In the semiconductor device 10of the first embodiment the center point 210 h of the region 210 hr thatreaches the highest temperature in the circuit 210 during the operationof the vertical Hall element 110 (during execution of the spinningcurrent method), lies on the straight line A2-A2 intersectingorthogonally the current path CP1 in the vertical Hall element 110 andpassing the center of the vertical Hall element 110.

With this arrangement, during the operation of the vertical Hall element120 (during execution of the spinning current method), heat generatedfrom the heat source in the circuit 210 is transferred symmetrically inplan view with respect to the straight line A2-A2, into the verticalHall element 120 from the portion IS2 at which the straight line A2-A2crosses an end portion of the vertical Hall element 120 on the circuit210 side. Even though the vertical Hall element 120 has a temperaturedistribution due to the influence of the heat generated from the heatsource in the circuit 210, upon switching a direction in which a currentflows through the current path CP4 between the first direction and thesecond direction in accordance with the spinning current method, mannerof flowing of the two currents hence becomes substantially the same inthose two directions. Further, the current path CP5 and the current pathCP6 also exhibit substantially the same and symmetric temperaturedistribution. Manner of flowing of the two currents hence becomessubstantially the same in the third direction and the fourth direction.

Consequently, according to the third embodiment, even though the heatgenerated from the heat source in the circuit 210 reaches the verticalHall element 120 and the vertical Hall element 120 has a temperaturedistribution, the offset voltage can be removed with high accuracythrough use of the spinning current method.

As described above, even though a plurality of vertical Hall elements isprovided in parallel mutually on the same semiconductor substrate, theoffset voltage can be removed with high accuracy through use of thespinning current method.

Fourth Embodiment

In the fourth embodiment, description is given of a case in which twovertical Hall elements are arranged perpendicular to each other on thesame semiconductor substrate. FIG. 5 is a plan view of a semiconductordevice 40 including vertical Hall elements and a heat source accordingto the fourth embodiment of the present invention.

As illustrated in FIG. 5, the semiconductor device 40 of the fourthembodiment further includes the vertical Hall element 120 providedperpendicular to the vertical Hall element 110, in the region R3different from the regions R1 and R2, in addition to the components ofthe semiconductor device 10 of the first embodiment. The same componentsas those of the semiconductor device 10 of the first embodiment asillustrated in FIG. 1 are denoted by the same reference symbols, andredundant description thereof is omitted as appropriate.

The vertical Hall element 120 includes the N-type semiconductor layer102 (see FIG. 2) formed as the magnetic sensing portion on the P-typesemiconductor substrate 101, and the electrodes 121 to 125 formed fromN-type impurity regions in the surface of the semiconductor layer 102 aselectrodes for supplying a drive current and for outputting a Hallvoltage. As illustrated in FIG. 5, the electrodes 121 to 125 arearranged side by side in order along the straight line A3-A3 orthogonalto the straight line A1-A1. The line A3-A3 is supposed to equally dividethe vertical Hall element 120 along the lateral direction.

The P-type element isolation diffusion layer 103 (see FIG. 2) is formedto surround the vertical Hall element 120, and the circuit 210 havingthe heat source, the vertical Hall element 110, and the vertical Hallelement 120 are electrically and mutually isolated by the elementisolation diffusion layer 103.

Next, a positional relationship among the circuit 210 having the heatsource, the vertical Hall element 110, and the vertical Hall element 120is described.

In the vertical Hall element 120 of FIG. 5, removal of the offsetvoltage through use of the spinning current method requires flow of thedrive current in four directions, that is, a direction (first direction)from the electrode 122 to the electrode 124, a direction (seconddirection) from the electrode 124 to the electrode 122, a direction(third direction) from the electrode 123 to each of the electrode 121and the electrode 125, and a direction (fourth direction) from each ofthe electrode 121 and the electrode 125 to the electrode 123. In FIG. 5,the current path CP4 for a Hall element drive current flowing betweenthe electrode 122 and the electrode 124, the current path CP5 for a Hallelement drive current flowing between the electrode 123 and theelectrode 121, and the current path CP6 for a Hall element drive currentflowing between the electrode 123 and the electrode 125 are illustrated.Specifically, the current path CP4 corresponds to a path for a drivecurrent in the first direction and the second direction in the verticalHall element 120, and the current paths CP5 and CP6 correspond to pathsfor a drive current in the third direction and the fourth direction inthe vertical Hall element 120.

In the fourth embodiment, the vertical Hall element 120 is provided, inaddition to the semiconductor device 10 of the first embodiment asillustrated in FIG. 1 in which the vertical Hall element 110 and thecircuit 210 having the heat source are arranged so that the center point210 h of the region 210 hr lies on the straight line A4-A4 intersectingorthogonally the current path CP4 in the vertical Hall element 120 andpassing the center of the vertical Hall element 120. In thesemiconductor device 10 of the first embodiment the center point 210 hof the region 210 hr that reaches the highest temperature in the circuit210 during the operation of the vertical Hall element HO (duringexecution of the spinning current method), lies on the straight lineA2-A2 intersecting orthogonally the current path CP1 in the verticalHall element 110 and passing the center of the vertical Hall element110.

With this arrangement, during the operation of the vertical Hall element120 (during execution of the spinning current method), heat generatedfrom the heat source in the circuit 210 is transferred symmetrically inplan view with respect to the straight line A1-A4, into the verticalHall element 120 from the portion 1S2 in the vertical Hall element 120at which the straight line A1-A4 crosses an end portion of the verticalHall element 120 on the circuit 210 side. Even though the vertical Hallelement 120 has a temperature distribution due to the influence of theheat generated from the heat source in the circuit 210, upon switching adirection in which a current flows through the current path CP4 betweenthe first direction and the second direction in accordance with thespinning current method, manner of flowing of the two currents hencebecomes substantially the same in those two directions. Further, thecurrent path CP5 and the current path CPC also exhibit substantially thesame and symmetric temperature distribution. Manner of flowing of thetwo currents hence becomes substantially the same in the third directionand the fourth direction.

Consequently, according to the fourth embodiment, even though the heatgenerated from the heat source in the circuit 210 reaches the verticalHall element 120, and the vertical Hall element 120 has a temperaturedistribution, the offset voltage can be removed with high accuracythrough use of the spinning current method.

As described above, even though the two vertical Hall elements arearranged perpendicular to each other on the same semiconductorsubstrate, the offset voltage can be removed in each vertical Hallelement with high accuracy through use of the spinning current method.

As described above, according to the embodiments of the presentinvention, even if any circuit having a heat source is provided aroundthe vertical Hall element, it is possible to substantially eliminate aninfluence of heat generated from the heat source during execution of thespinning current method in the vertical Hall element. This eliminatesthe need to, for example, provide the circuit having the heat sourceaway from the vertical Hall element, and thus enables reduction incircuit size.

The embodiments of the present invention have been described above, butthe present invention is not limited to the above-mentioned embodiments,and it is to be understood that various modifications can be madethereto without departing from the gist of the present invention.

For example, in the example described in the above-mentionedembodiments, the vertical Hall element includes five electrodes.However, three or more electrodes in total, specifically, two electrodesfor drive current supply and one electrode for Hall voltage output,suffice for the purpose.

Further, in the example described in the above-mentioned embodiments,the first conductivity type is the P type, and the second conductivitytype is the N type. However, the opposite case is allowed, that is, thefirst conductivity type is the N type and the second conductivity typeis the P type.

The electrodes 121 to 125 of the vertical Hall element 120 in the thirdand fourth embodiments preferably have substantially the same size andshape and are arranged at substantially equal intervals. With thisconfiguration, the vertical Hall element 120 becomes line-symmetric withrespect to its center line, that is, the straight line A3-A3, and mannerof flowing of the currents becomes substantially the same in everydirection in any of the current paths CP4, CP5, and CP6. Thisconfiguration allows highly accurate removal of the offset voltagethrough use of the spinning current method.

What is claimed is:
 1. A semiconductor device, comprising: a firstvertical Hall element provided in a first region of a semiconductorsubstrate, and having a first electrode, a second electrode, and a thirdelectrode which are arranged side by side in order along a firststraight line; a first circuit provided in a second region of thesemiconductor substrate different from the first region, and having aheat source; and a second straight line intersecting orthogonally afirst current path for a Hall element drive current which flows betweenthe first electrode and the third electrode, the second straight linepassing a center of the first vertical Hall element, wherein a centerpoint of a region which reaches the highest temperature in the firstcircuit during an operation of the first vertical Hall element lies onthe second straight line.
 2. The semiconductor device according to claim1, further comprising a second circuit provided in a third region of thesemiconductor substrate different from the first region and the secondregion, and having a heat source, wherein a center point of a regionwhich reaches the highest temperature in the second circuit during theoperation of the first vertical Hall element lies on the second straightline.
 3. The semiconductor device according to claim 1, furthercomprising a second vertical Hall element provided in a third region ofthe semiconductor substrate different from the first region and thesecond region, and having a fourth electrode, a fifth electrode, and asixth electrode which are arranged side by side in order along a thirdstraight line, wherein a straight line intersecting orthogonally asecond current path for a Hall element drive current which flows betweenthe fourth electrode and the sixth electrode, and passing a center ofthe second vertical Hall element, coincides with the second straightline.
 4. The semiconductor device according to claim 1, furthercomprising: a second vertical Hall element provided in a third region ofthe semiconductor substrate different from the first region and thesecond region, and having a fourth electrode, a fifth electrode, and asixth electrode which are arranged side by side in order along a thirdstraight line orthogonal to the first straight line; and a fourthstraight line intersecting orthogonally a second current path as a pathfor a Hall element drive current which flows between the fourthelectrode and the sixth electrode, and passing a center of the secondvertical Hall element, and wherein the center point of the region thatreaches the highest temperature in the first circuit during theoperation of the first vertical Hall element lies on the fourth straightline.
 5. The semiconductor device according to claim 1, Wherein thefirst vertical Hall element further includes a seventh electrode and aneighth electrode provided side by side with respect to the firstelectrode, the second electrode, and the third electrode along the firststraight line so as to sandwich the first electrode, the secondelectrode, and the third electrode.
 6. The semiconductor deviceaccording to claim 1, wherein the first vertical Hall element isline-symmetric with respect to the second straight line.
 7. Thesemiconductor device according to claim 3, wherein the second verticalHall element further comprises a ninth electrode and a tenth electrodeprovided side by side with respect to the fourth electrode, the fifthelectrode, and the sixth electrode along the third straight line so asto sandwich the fourth electrode, the fifth electrode, and the sixthelectrode.
 8. The semiconductor device according to claim 3, wherein thesecond vertical Hall element is line-symmetric with respect to thesecond straight line.
 9. The semiconductor device according to claim 4,wherein the second vertical Hall element further comprises a ninthelectrode and a tenth electrode provided side by side with respect tothe fourth electrode, the fifth electrode, and the sixth electrode alongthe third straight line so as to sandwich the fourth electrode, thefifth electrode, and the sixth electrode.
 10. The semiconductor deviceaccording to claim 4, wherein the second vertical Hall element isline-symmetric with respect to the fourth straight line.